Dynamic Simulation of Electrochemical Etching of Silicon
نویسندگان
چکیده
In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.
منابع مشابه
Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions
Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
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